《Physics of Semiconductor Devices》Syllabus
Course ID: PHYS2028-09WZ05-1
Credit:4
Hours: (2+2)*17=68
The type of course: specialized course
Student objects:undergraduate students
Lecturer:Xue-Feng Wang
Update date:October 27, 2023
Prerequisite courses: quantum mechanics, statistical physics, solid state physics
Text Book: Semiconductor Devices: Physics and Technology, S. Sze, 3rd, Wiley, 2001.
Content outline: Fundamentals of semiconductor physics; PN junction theory; Bipolar junction transistors fundamental operation, current components, gains, emitter efficiency, base transport, high-and low current effects, base-width modulation, small-signal modeling, large-signal modeling, frequency characteristics, power characteristics, switch and noise characteristics; Metal-oxide- semiconductor field effect transistor MOS capacitor, basic principles of MOSFET, threshold voltage, strong inversion, weak and moderate inversion, static behavior, dynamic behavior, and equivalent circuits, metal-oxide-semiconductor field effect transistor small-geometry effects, short-channel effect, some secondary effects, deep submicron MOSFET.
Syllabus Description
Course objectives and tasks
This course provides the students with theoretical and practical background for understanding the fundamentals of modern semiconductor devices.
2. Course basic request
Through the study of the course, students would develop a better and in-depth understanding of the semiconductor physics associated with junction diodes, transistors, field effect transistors, and develop the skills necessary to analyze the electrical characteristics and operation of semiconductor devices.
Related to other courses
This course is one of the specialty courses for electrical science & technology major and microelectronics major, and is tightly related to other specialty courses. This course also serves as the introduction course for other advanced semiconductor device courses.
4. Course property and suitable objects
Compulsory for electrical science & technology major and microelectronics major.
Course outline content
Chapter 0 Introduction
semiconductor Devices, semiconductor Technology
PART I: SEMICONDUCTOR PHYSICS (Ch.s 1 - 2)
Chapter 1 Energy Bands and Carrier Concentration in Thermal Equilibrium
semiconductor Materials, basic Crystal Structures, valence bonds, energy bands, intrinsic carrier concentration, donors and acceptors
Chapter 2 Carrier Transport Phenomena
carrier drift, carrier diffusion, generation and recombination processes continuity equation, thermionic emission process, tunneling process, space charge effect, high-field effects
PART II: SEMICONDUCTOR DEVICES (Ch.s 3 - 10)
Chapter 3 p–n Junction
thermal equilibrium condition, depletion region, depletion capacitance, current-voltage characteristics, charge storage and transient behavior, junction breakdown, heterojunction
Chapter 4 Bipolar Transistors and Related Devices
transistor action, static characteristics of bipolar transistors, frequency response and switching of bipolar transistors, non-ideal effects, heterojunction bipolar transistors, thyristors and related power devices
Chapter 5 MOS Capacitor and MOSFET
MOS capacitor, basic principles of MOSFET , threshold voltage, strong inversion, weak and moderate inversion, static behavior, dynamic behavior, and equivalent circuits
Chapter 6 Advanced MOSFET and Related Devices
MOSFET scaling, CMOS and BICMOS, MOSFET on insulator, MOS memory structures, power MOSFET
Chapter 7MESFET and Related Devices
Metal-semiconductor contacts, MESFET, MODFET
Chapter 8Microwave Diodes; Quantum-Effect and Hot-Electron Devices
Microwave frequency bands, tunnel diode, IMPATT diode, transferred-electron devices, quantum-effect devices, quantum-effect devices, hot-electron devices
Chapter 9 Light-Emitting Diodes and Lasers
Radiative transitions and optical absorption, light-emitting diodes, various light-emitting diodes, semiconductor lasers
Chapter 10 Photodetectors and Solar Cells
photodetectors, solar cells, silicon and compound-semiconductor solar cells, third-generation cells, optical concentration
PART III: SEMICONDUCTOR TECHNOLOGY (Ch.s 11 - 15)
Chapter 11 Crystal Growth and Epitaxy
Silicon crystal growth from the melt, silicon float-zone process, GaAs crystal-growth techniques, material characterization, epitaxial-growth techniques, structure and defects in, epitaxial layers
Chapter 12 Film Formation
Thermal oxidation, chemical vapor deposition of dielectrics, chemical vapor deposition of polysilicon, atomic layer deposition, metallization
Chapter 13 Lithography and Etching
Optical lithography, next-generation lithographic methods, wet chemical etching, dry etching
Chapter 14 Impurity Doping
Basic diffusion process, extrinsic diffusion, diffusion-related processes, range of implanted ions, implant damage and annealing, implantation-related processes
Chapter 15 Integrated Devices
Passive components, bipolar technology, MOSFET, technology, MESFET technology challenge for nanoelectronics